Apparatus for sensing deposition of a thin film layer of a material

ABSTRACT

Apparatus for sensing deposition of a thin film layer of a material from a source onto a substrate having a carriage assembly including a predetermined number of apertures for selectively passing predetermined portions of a material from the source along each of a plurality of predetermined paths located in the proximity of the substrate under conditions correlated to that under which the material is deposited through a deposition path onto the substrate, inhibiting elements positioned relative to the carriage assembly for selectively inhibiting passage of predetermined portions of the material through a selected number of the predetermined number of the apertures, and a monitior for monitoring a selected parameter of the thin film material which is passed through other than the selected number of apertures of the carriage assembly wherein the monitor includes a plurality of detectors one of each of which is positioned along one of the plurality of predetermined paths and being adapted to sense a predetermined portion of a thin film material being passed along its associated predetermined path and for producing electrical signals derived from the selected parameter representating at least one of the mass per unit area, thickness and deposition rate of the thin film material is shown. A method for measuring at least one of the mass per unit area, thickness and deposition rate of a thin film layer being deposited through a deposition mask selected from a plurality of deposition masks adapted to be positioned between a substrate and a source is also shown.

CONTINUATION-IN-PART

This is a continuation-in-part of Application Ser. No. 232,842 filedFeb. 9, 1981 now U.S. Pat. No. 4,373,470 and assigned to the assignee ofthis Application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to apparatus and a method for sensing depositonof a thin film layer of a material from a source onto a substrate andmore particularly applies to an apparatus and method for sensing themass per unit area, thickness or deposition rate of a thin film formedof one or more layers of material being deposited on a selected surfaceof a substrate in a vapor deposition process utilizing one or more of aplurality of detecting means in a preselected array.

2. Description of the Prior Art

There are several known techniques in the prior art for measuring themass per unit area or thickness of a thin film layer of material beingapplied to a substrate.

It is known in the prior art to utilize a thin film detector having adetecting surface positioned to intercept a portion of the materialbeing emitted from the sources such that the detecting surface andsubstrate surface have a thin film layer of material deposited thereonunder similar conditions. By monitoring the mass per unit area,thickness or deposition rate of the material being applied to thedetecting surface, the mass per unit area or thickness of the thin filmlayer of material being applied to a selected surface of a substrate canbe monitored and controlled.

One known method of measurement of evaporated film thickness duringevaporation has been accomplished using optical devices for opticallysensing the thickness of a thin film on a detecting surface. Further, itis known in the art to change the resonance frequency of a piezoelectriccrystal which occurs during formation of a film of material on thesurface of the piezoelectric crystal.

Another known prior at method is to measure the resistance of a thinfilm conductive layer as it is formed on the substate or a detectingmeans surface. The resistance of the thin film layer of material variesin magnitude as a function of the thickness of the thin film ofmaterial.

It is also known in the art to measure vapor concentration of thematerial being evaporated. Certain of the prior art systems utilize amechanical chopper for modulating the beam of evaporating material sothat it can be separately measured from the effect of the residual gaswithin the vacuum chamber in the deposition process.

In addition, a number of known systems are commercially available formeasuring the thickness of a film of material applied to a substrate.One such system utilizing a piezoelectric crystal is offered for saleand sold by Sloan Technology of Santa Barbara, Calif. under the name"DTM" Monitoring System. Another such system utilizing the vaporconcentration techniques is offered for sale and sold byLeybold-Heraeus, East Syracuse, N.Y. under the name "INFICON Sentinel200" deposition controller.

SUMMARY OF THE INVENTION

The present invention discloses an apparatus for sensing deposition of athin film layer of a material from a source onto a substrate. In thepreferred embodiment, means including means for defining a predeterminednumber of apertures for selectively passing predetermined portions of amaterial from a source along each of a plurality of predetermined pathslocated in the proximity of a substrate is provided. The material beingpassed along the predetermined paths are passed under conditionscorrelated to that under which a material is deposited through adeposition path in a thin film layer onto a substrate. Means arepositioned relative to the selectively passing means for selectivelyinhibiting passage of a predetermined portion of the material througheach of a selected number of the predetermined number of apertures.Means for monitoring a selected parameter of a thin film material whichis passed through other than the selected number of predetermined numberof said apertures of the selectively passing means are provided. Themonitoring means including detecting means are positioned along each ofthe plurality of predetermined paths and are adapted to sense apredetermined portion of the thin film material being passed along itsassociated predetermined path and for producing electrical signalsderived from the selected parameter of the thin film material sodetected representing at least one of the mass per unit area, thicknessand deposition rate of a said thin film of material.

In the known prior art devices, the use of optical procedures reliesupon the variable optical density of a collected film and does notprovide a precise measurement of mass per unit area or thickness of athin film to the level desired for the advanced technology of the thinfilm deposition of layers for electrical components such as for examplethe fabrication of thin film magnetic heads. These and other knowndevices do not avail themselves to optical sensing techniques since thedeposited films are often opaque and too thick for such techniques.

The use of a piezoelectric quartz crystal which changes its resonancefrequency in and of itself does not provide the desired accuracy formeasuring the thickness of a plurality of thin film layers of differentmaterials which are generally required in connection with thefabrication of electronic devices because the variation in frequency tofilm thickness is non-linear and dependent upon the characteristics ofeach of the materials so deposited. If the material deposited on thecrystal surface is homogeneous, it is possible to mathematicallycompensate for the non-linearity effects to obtain accuratemeasurements. If the material deposited on the crystal surface isnon-homogeneous mixed thin film layers of different materials it is verydifficult to compensate for the non-linearity resulting in order toobtain accurate measurements.

Another disadvantage of the prior art devices is that as the netthickness of various layers of material accumulates on the crystalsurface, a limitation is reached as to the maximum thickness of materialthat can be deposited on the crystal with reliable response.

In a multi-vapor deposition process, it is possible to exceed thethickness range of a detector being used for the process before theprocess is completed.

The quantity of material which reaches a single detector can be reducedby use of a mechanical chopper to interrupt the beam of evaporatingmaterial. The use of a chopper for modulating the beam of evaporatingmaterial results in additional mechanical components being positionedwithin the chamber.

The combination of a detector and a mechanical chopper does not providean accurate means for monitoring a plurality of different materialswhich could be deposited on a substrate. If a two stage modulator isused for depositing two layers of different material on a substratethrough one mask, a shutter mechanism must be used. Use of a shuttermechanism means results in additional apparatus and cost.

Another disadvantage of the prior art devices is that in a multi-stepvapor deposition process, it is necessary to have independent monitoringsystems for each material and means including mechanical shuttering forselecting the appropriate monitoring crystal or device associated withthe material and which must be programmed into the deposition process.

An additional disadvantage of the prior art measuring systems is thatthe fabrication of present state of the art eletronic components usingvapor deposition techniques result in layers of material having athickness which substantially equal or exceed the thicknesses which canbe reliably measured using a single crystal detector.

One advantage of the present invention is that a plurality ofpiezoelectric crystal detector devices, compatibable to the processitself can be utilized and at least one crystal detector can be assignedto each specific evaporation material. Thus, in a multi-step vapordeposition process utilizing several different materials, a specificselected crystal detector can be utilized for each specific type ofevaporation material and the crystal detector dedicated to that type ofevaporation material can precisely measure the thickness and weight of athin film layer thereof deposited on a substrate during a vapordeposition.

Another advantage of the present invention is that the net thickness ofmaterial deposited on each detector surface individually is reduced dueto the fact that a plurality of detectors are utilized to receivematerial normally deposited on a single detecting surface. This resultsin a decrease of non-linearity measurement problems arising from mixedor non-homogenous layers of material and also helps avoid exceeding themaximum thickness range of the detector.

Yet another advantage of the present invention is that by use of anelongated supporting frame, a plurality of monitoring apertures can beformed around the aperture through which the deposited material passesto a selected substrate so that a predetermined quantity of material isdeposited on a selected crystal detector surface under substantially thesame conditions as that material is deposited to form the thin filmlayer on the selected substrate. If a substrate is to have a pluralityof thin film layers of different materials formed thereon, a selecteddifferent crystal detector can be utilized and dedicated to eachmaterial which is formed into a thin film layer.

A yet further advantage of the present invention is that by use of asimple mechanical inhibiting means, an elongated supporting frame can bemechanically programmed such that at each step of the vapor depositionprocess, a crystal detector associated with the material being vapordeposited can be utilized so that a precise thickness and weight of thethin film layer of material can be controlled. The same selected crystaldetector would be used each time its associated material is deposited ona thin film substrate.

A further advantage of the present invention is that the carriageassembly includes inhibiting means in the form of capping devices toprevent other detectors from receiving unwanted material. In addition,the capping devices prevent buildup or contamination of the othercrystals detectors with undesired material from other process steps.

A still yet further advantage of the present invention is that amonitoring means includes a plurality of detectors in a predeterminedarray and includes means for producing an information signalrepresenting at least one of the mass per unit area, thickness ordeposition rate of a thin film layer of material for each of thedetectors in the array.

Yet another advantage of the present invention is that a programmingcontrol means responsive to a monitoring means produces a control signalwhich is utilized to control passage of a vapor desposition materialalong a deposition path to obtain desired mass per unit area, thicknessor deposition rates and includes an indication means for indicating thesame.

A yet further advantage of the present invention is that the apparatusand method of the present invention can be utilized in a multi-stageelongated supporting frame having a plurality of masks and where aselected detector is associated with a specific mask forming aninherently programmed detector selection device for use in a multi-stepdeposition process.

BRIEF DESCRIPTION OF THE DRAWING

The foregoing and other advantages and features of this invention willbecome apparent from the following description of the preferredembodiment, when considered together with the illustrations and theaccompanying drawing which includes the following Figures:

FIG. 1 is a plan side view partially in schematic, showing the floor ofthe carriage means which includes the carriage assembly, means forsupporting a mask within an aperture of the elongated mask supportingframe and means in the form of a gantry for accurately registering asubstrate to an indexed selected mask positioned at a working station;

FIG. 2 is a top plan view showing an elongated mask supporting frame,the apertures formed therein and the translatably supported tooth rackand coupling gear for driving the elongated mask supporting frameincluding magnets for specific applications;

FIG. 3 is a bottom plan view showing three apertures having apredetermined diameter and a preselected spacing between the centersthereof and wherein a pair of central guide rollers and a support rollerfor providing the equivalent of a three point center support andsuspension is shown;

FIG. 4 is a sectional end view of the elongated mask supporting frametaken along section lines 4--4 of FIG. 3;

FIG. 5 is an end sectional view of the elongated mask supporting frametaken along section lines 5--5 of FIG. 3;

FIG. 6 (a) is a partial top plan view of one aperture within theelongated mask supporting frame having a mask supported therein;

FIG. 6 (b) is a pictorial representation of an alignment targetillustrated in FIG. 6 (a) to afford precise alignment between selectedmasks;

FIG. 7 is a partial front sectional plan view of an elongated masksupporting frame having a selected mask and a shield tube mountedtherein;

FIG. 8 is a front plan view of that portion of the means located on agantry for accurately registering a substrate relative to an indexedmask;

FIG. 9 (a), (b) and (c) illustrate diagrammatically a mask supportassembly having a plurality of apertures which are adapted to supportmasks, a single support roller; two pair of guide rollers and a meansfor driving the elongated mask supporting frame along a path which issubstantially parallel to the direction of elongation thereof andwherein FIG. 9 (a) shows the elongated mask supporting frame in a centerposition; FIG. 9 (b) shows the same in the far right position; and FIG.9 (c) shows the same in the far left position, respectively;

FIG. 10 is a partial top plan view of the means for accuratelyregistering a substrate to a mask located in an aperture which isselectively positioned in the work station;

FIG. 11 is a side plan view partially in cross-section and partiallydiagrammatic showing a monitoring tube and means for monitoringdeposition of a layer of material on a substrate through the mask at aworking station;

FIG. 12 is a partial top plan view partially in cross sectionillustrating the mounting of a mask within an aperture of an elongatedmask supporting frame, a plurality of monitoring tube apertures locatedaround the mask support aperture and means for selectively passing aportion of the vapor deposition along a selected monitoring tube; and

FIG. 13 is a pictorial representation of three programmed arrangementswherein one or more monitoring tubes are located in the monitoringapertures located adjacent the mask aperture for selecting a specificmonitor in association with a specific mask position in a vapordeposition device.

DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 1 discloses a means for supporting one mask from a plurality ofmasks relative to a work station. In its broadest aspects, thesupporting means includes a carriage assembly which includes a meanscomprising an elongated mask support means such as an elongated masksupporting frame 20 having an upper surface 24 and a lower surface 26.The elongated mask supporting frame 20 includes means for defining aplurality of apertures 30 which extend to the upper surface 24 and thelower surface 26. Each aperture 30 has a predetermined diameter and apreselected spacing between the centers 32 of each aperture. Each of theapertures 30 can be adapted to have a mask positioned therein asillustrated at work station 40. This structure is generally referred toas means adapted for positioning each of the masks in a predeterminedposition relative to each other. The longitudinal axis of the elongatedmask supporting frame is in the direction thereof. This lateral axis ofthe elongated mask supporting frame is in a direction perpendicular tothe longitudinal axis and in a plane parallel to the plane of theaperture defined by the elongated mask supporting frame.

In the preferred embodiment, aperture 30 at work station 40 has a vapordeposition tube member 42 having one end thereof which is positionedrelative to a source 44. In the preferred embodiment, source 44 is asource of vapor deposition material which emanates from the source 44along the path indicated by dashed Arrows 46. The vapor depositionpasses through the mask shield 42 and a mask 50 which is supported by amask support assembly 52. The elongated mask supporting frame includes amask supporting housing 54 for fixedly securing the vapor depositiontube member 42 and the mask support assembly 52 having the mask thereinsuch that indexing of the mask 50 to the work station positions the maskin substantial alignment with the source 44.

After the elongated mask supporting frame 20 indexes mask 50 at the workstation, a means for accurately registering a substrate, shown generallyas gantry assembly 60, and which includes alignment means 62 and 64accurately registers substrate 70 located on the gantry support means 60relative to the mask 50.

As illustrated in FIG. 1, the gantry means for registering the substraterelative to the mask assembly and mask 50 is in an operative position.However, the gantry means is adapted to be rotated about pivot point 72in a counter clockwise direction as shown by dashed arrow 74 to raiseand withdraw the substrate 70 from its position in accurate registrationwith the mask 50. Of course, other means may be used to withdraw thegantry with the substrate from the mask.

With the gantry means in the raised position, the elongated masksupporting frame 20 is then driven to transport a different mask, whichmay have any selective pattern, into the working station 40. After adifferent mask is indexed to the work station 40, the gantryregistration means 60 is then rotated in a clockwise direction shown bydashed arrow 76 causing the registration means 62 and 64 of the gantrymeans to accurately register the substrate 70 relative to a differentmask then positioned at the work station. The registration means may beany appropriate mechanism to insure alignment between the gantry andmask. In the preferred embodiment, a pin and pin receiving socket isutilized.

FIG. 2 shows one embodiment of a means for selectively indexing one maskfrom a plurality of masks relative to a work station. The carriageassembly illustrated in FIG. 2 includes elongated mask supporting frame20 having an upper surface 24 and a lower surface 26 which is shown ingreater detail in FIGS. 4 and 5.

In the broadest aspect, the elongated mask support means includes meansfor defining a guiding element and supporting element for the elongatedmask support means. In the preferred embodiment, the elongated masksupporting frame has means defining a guiding element and supportingelement in the form of a pair of spaced parallel generally elongatedsupport rails 90 and 92 and which are located and extend along theperiphery of the lower surface of the elongated mask supporting frame20.

The elongated mask supporting frame 20 includes means for defining thepluralities of apertures 30 which are adapted to receive a mask assemblypositioned therein. The apertures 30 extend through the upper surface tothe lower surface of the elongated mask supporting frame 20. In FIG. 2,the elongated mask supporting frame is shown to have cross members 86which may be applied hereto to provide additional structural rigidity tothe elongated mask supporting frame 20.

The elongated mask supporting frame 20 includes means for defining amask supporting surface, which in the preferred embodiment, is in theform of a pair of spaced, parallel, generally elongated side walls 80and 82 extending along the periphery of the surface of the elongatedmask supporting frame 20 defining a mask supporting means. The sidewalls 80 and 82 are in opposed alignment with the elongated supportrails 90 and 92.

In addition to the mask receiving apertures 30, each mask position hasin the preferred embodiment, four monitoring tube apertures 100, 102,104 and 106 which are illustrated for mask position 98.

FIG. 3 illustrates the elongated mask supporting frame with an aperturefor a mask indexed to a working station. In the bottom view of FIG. 3 isillustrated also a pair of central guide rollers 120 and 122, each ofwhich have an outer grooved recessed rail receiving surface illustratedas grooved recessed rail receiving surface 126 in FIG. 4. The centralguide rollers 120 and 122 are adapted to engage, guide and dynamicallysupport the rail 90 of the pair of rails as the elongated masksupporting frame 20 is conveyed along a path which is substantiallyparallel to the direction of elongation thereof. Each of the centralguide rollers 120 and 122 are adapted to rotate about an axis which issubstantially normal to the direction of elongation of the elongatedmask supporting frame 20 and each of which are parallel to and inalignment with the axis of a support roller 110. In the preferredembodiment, the axes of the central guide rollers are positionedequidistantly one on each side of the axis of the support roller 110.Each of the guide rollers 120 and 122 are adapted to have the groovedrecessed rail receiving surface 126 as illustrated in FIG. 4, which isadapted to rotatably engage the rail 90 which is the other of the pairof rails, to maintain the same in a fixed position within the recessedgroove 126 during conveyance of the elongated mask supporting frame.

Referring again to FIG. 3, a support roller 110 having an outercylindrical roller bearing surface and a selected axial length isadapted to engage and dynamically rotatably support one of the pair ofrails such as rail 92 in order to support the mask support assembly inthe elongated mask supporting frame 20 as it is conveyed along a pathwhich is substantially parallel to the direction of elongation of theelongated mask supporting frame 20. Support roller 110 defines a meansfor supporting the elongated mask supporting frame 20, through a meansfor defining a supporting element such as rail 92. In use, the supportroller 110 is adapted to rotate about an axis which is substantiallynormal to the direction of elongation of the elongated mask supportingframe 20. The support roller 110 outer rail bearing surface must have awidth to accommodate the lateral thermal expansion of the elongated masksupporting frame, e.g., the outer cylindrical rail bearing surface has awidth parallel to the elongated mask supporting frame which is at leastequal to the width of the rail 92 carried thereby plus any variations inthe elongated mask supporting frame due to thermal expansion andcontraction. In essence, the edge of rail 92 engages the outercylindrical rail bearing surface which is in parallel alignment with thesupport roller axis.

As noted herein, at least one of the movably engaging means or the meansdefining a guiding element includes a recessed groove and the otherincludes a protruding lip. In the preferred embodiment, the protrudinglip is located on the elongated mask supporting frame and the recessedgroove on the central guide roller. However, the recessed groove couldbe located on the elongated mask supporting frame and the protruding lipon the surface of the central guide roller. Either variation thereof maybe used in practicing this invention.

As illustrated in FIG. 3, with the elongated mask supporting frame in acenter position, the central guide rollers 120 and 122 and the supportroller 110 provide the equivalent of a three point suspension andsupport. As the elongated mask supporting frame 20 is exposed to athermal environment, as experienced in a vapor deposition process, thelength and width thereof will increase due to thermal expansion. Therail 90 is essentially confined by the outer grooved recessed railreceiving surface 126 of each central guide roller 120 and 122 such thatmovement thereof is along the line of reference. This variation in widthof the elongated mask supporting frame 20 results in rail 92 movinglaterally along the outer cylindrical rail bearing surface of supportroller 110.

Variations in length of the elongated mask supporting frame areaccommodated by rail 90 moving relative to the outer, grooved recessedrail receiving surface of each central guide roller 120 and 122.

As shown in FIG. 3, the elongated mask supporting frame 20 is supportedby the support roller 110 and central guide rollers 120 and 122. Oneexample thereof is shown in greater detail in FIG. 9 (a) when theelongated mask supporting frame is in centered position. When theelongated mask supporting frame is off center position, the elongatedmask supporting frame engages and is supported by remote guide rollers256 and 258 as illustrated in FIGS. 9 (b) and 9 (c).

When the center of gravity of the elongated mask supporting frame islocated within a stabilized trianglar area formed by the rail contactpoints in support roller 110 and central guide rollers 120 and 122, theequivalent three point suspension and support is provided by supportroller 110 and central guide rollers 120 and 122. When the center ofgravity is located at positions other than within the above describedstabilized triangular area, the equivalent three point suspension andsupport is provided by the support roller 110 and by at least onecentered guide roller 120 or 122 and one remote guide roller 256 or 258.This is discussed in greater detail in connection with FIGS. 9 (a), 9(b), and 9 (c). The effect of the relationship between the supportroller 110 of FIG. 3 and the central guide rollers 120 and 122 is toform an equivalent three point suspension and support which concurrentlyholds the elongated mask supporting frame 20 in position relative to afixed reference line essentially independent of the variations inphysical characteristics while affording transportation of the same. Oneinherent relationship exists in the equivalent three point suspensionand support system, that is, the center of gravity of the elongated masksupporting frame must be maintained within the area defined by thestabilized triangular area between the center lines of the axes of thecentral guide rollers 120 and 122, otherwise the elongated masksupporting frame 20 will tilt off of the three point suspension system.

In order to prevent or inhibit the above, a means for inhibitingseparation of the elongated mask supporting frame 20 from the supportingmeans, the support roller 110, and the guide means, e.g. the centralguide rollers 120 and 122 is needed.

One such separation inhibiting means may be a second set of remotelylocated guide rollers such as remote guide rollers 256 and 258illustrated in FIG. 9. The construction of the remote guide rollers 256and 258 are similar to the pair of central guide rollers 120 and 122 andare positioned one on each side of and in alignment with the pair ofcentral guide rollers 120 and 122. When the elongated mask supportingframe 20 is in its centered position the remote guide rollers 256 and258 as illustrated in FIG. 9 (a) are positioned just off the ends of theelongated mask supporting frame 20.

When the elongated mask supporting frame 20 is transported in eitherdirection relative to the pair of central guide rollers 120 and 122, theremote guide rollers 256 or 258 located in the direction of movementwill engage the end of the elongated mask supporting frame 20. As thecenter of gravity of the elongated mask supporting frame 20 shifts to aposition between one of the central guide rollers 120 or 122 and one ofthe remote guide rollers 256 or 258, an equivalent three pointsuspension and support system is developed between one or both of thecentral guide rollers 120 or 122, one of the remote guide rollers 256 or258 and the support roller 110. Thus, at any transported position andindependent of the length, width, or distortion of the elongated masksupporting frame 20, a three point suspension and support exists toprevent the elongated mask supporting frame from falling off of therollers while being referenced to a reference line which extends throughthe grooved edges of all of the central guide rollers 120 and 122 andthe remote guide rollers 256 and 258.

In addition to variations in width and length experienced by theelongated mask supporting frame 20, the elongated mask supporting frame20 experiences warpage in the form of crook, bowing and twisting orcombinations thereof. For purposes hereof, the term "crook" shall meancurvature of the elongated mask supporting frame about an axis which issubstantially normal to a plane defined by the longitudinal and lateralaxes of the elongated mask supporting frame with the curvature beinglocated with such plane. The term "bow" shall means curvature of theelongated mask supporting frame, about an axis parallel to the lateralaxis and located away from the nominal plane defined by the longitudinaland lateral axes of the elongated mask supporting frame. The term"twist" shall mean skewing of opposite edges of the elongated masksupporting frame.

When a crook type warpage occurs and one of the remote guide rollers 256and 258 in FIG. 9 (a) engage the rail 90 of the elongated masksupporting frame, rail 90 will ride upon the grooved recessed railreceiving surface 126 of the central guide roller 120 shown in FIG. 4,but the rail 90 will be held in position by the edges of the groovedrecessed rail receiving surface 126. The relationship between the rail90 and groove of central guide roller 122 would be the same except thatthe edge of rail 90 would engage the opposite side of the groove of thecentral guide roller 122.

Referring again to FIG. 2, in the alternative, the separation inhibitingmeans may be a loaded clamping roller.

In the preferred embodiment, a loaded clamping roller 130 having anouter cylindrical sidewall bearing surface engages and dynamicallyclamps the sidewall 80 illustrated in FIG. 4, as the elongated masksupporting frame 20 is conveyed along a path which is substantiallyparallel to the direction of elongation thereof. The loaded clampingroller 130 is adapted to rotate about an axis which is substantiallynormal to the direction of elongation of the elongated mask supportingframe 20. In addition, the axis of the loaded clamping roller 130 isspaced in parallel alignment with the axis of the central guide rollers120 and 122 and is equidistant the central guide rollers of axis 120 and122.

Referring again to FIG. 4, the central guide roller 130 is spaced fromthe central guide roller 120. The spacing is such that, one edge of therail 90 of the pair of rails is located in the recessed groove 126 ofthe central guide roller 120 and the edge of the loaded clamping roller130 engages the edge of one of the side walls 80 of the pair ofsidewalls. The distance between the center of the recessed groove 126and the edge of the surface of the loaded clamping roller issubstantially equal to the geometrical dimension between the outer edgesof rail 90 and the surface of the loaded clamping roller such that therail edge remains in the groove. The elongated mask supporting frame 20is held in fixed or clamped position within the recessed groove 126 toinhibit separation of the elongated mask supporting frame 20 from theguide rollers 120 and 122 during conveyance of the elongated masksupporting frame relative to the central guide rollers. Likewise, as theelongated mask supporting frame is transported relative to the remoteguide rollers 256 and 258 of FIG. 9, the loaded clamping roller 130 ofFIGS. 4 and 5 inhibits separation of the elongated mask supporting frame20 from the appropriate central guide rollers 120 and 122.

Further, when the elongated mask supporting frame experiences crook typewarpage, the edge of the rail 90 does not stay in the center of therecessed groove 126 but, in fact, rides upon and contacts the slopededges of the central guide rollers 120 and 122 which define the groove.The loaded clamping roller 130 is sufficiently compliant to accommodatethe variations in the elongated mask supporting frame 20 while clampingand holding the same in position as noted above. Also, when theelongated mask supporting frame 20 is supported by one central guideroller and one remote guide roller, the clamping roller 110 issufficiently compliant to hold the rail 90 within the grooves and alsopermit the elongated mask supporting frame to bow while the rail 90 isstill being held in the grooves.

As illustrated in FIGS. 2, 3 and 4, the support roller 110 and thecentral guide rollers 120 and 122 provide a three point suspension andsupport to moveably support the elongated mask supporting frame 20 asthe same is conveyed along the direction of its elongation. The loadedclamping roller 130 cooperates with the central guide rollers 120 and122 to hold the edge of the rail 90 within the recessed groove 126 ofeach of the central guide rollers 120 and 122 while enabling the edge ofthe rail 92 to move laterally on the outer cylindrical bearing surfaceof the support roller 110 during conveyance of the elongated masksupporting frame.

In the case of twist type warpage, when the elongated mask supportingframe 20 is in an off centered position, rails of the elongated masksupporting frame 20 will engage one or both of the central guide rollers120 and 122, one of the remote guide rollers 256 and 268 and the supportroller 110 in a manner similar to that enumerated in crook or bow typewarpage.

Referring to FIGS. 3, 4 and 5, in the preferred embodiment the elongatedmask supporting frame 20 has a translatably supported tooth rack 140disposed along the outer surface of the rail 90 which is one of the pairof parallel rails 90 and 92. The translatably supported tooth rack 140extends along the length of the elongated mask supporting frame betweenpoints slightly beyond the center of the two end mask positions. Thetranslatably supported tooth rack 140 is selected to have a coefficientof thermal expansion which is substantially equal to that of theelongated mask supporting frame 20 and rail 90. The number of teeth inthe tooth rack 140 located between the center line of each apertureremains the same during the expansion and contraction of the elongatedmask supporting frame 20. Likewise the number of teeth on the peripheryof the coupling gear 142 remain the same. Thus, the ratio of teeth inthe tooth rack 140 relative to the number of teeth on the periphery ofthe coupling gear 142 remain the same even though the meshing capabilitytherebetween varies as a function of temperature.

With the above construction, the engagement point between the tooth rack140 and coupling gear 152 remains at substantially the same point andthe position of the mask relative to the working station is not changedsignificantly and the number of aperture positions that the elongatedmask supporting frame is translated is determined by the number ofrotations of the coupling gear 142.

In the preferred embodiment, the coupling gear 142 is rotatably mountedwith its axis substantially normal to the axis of the guide rollers 120and 122 and extends vertically upward from and is equally spaced betweenthe axis of the central guide rollers 120 and 122 and in spacedalignment with the axis thereof 120 and 122.

As shown in FIG. 3, the coupling gear 142 is located between the centralguide rollers 120 and 122 and in opposed alignment with the workingstation to which the mask aperture 30 is indexed. With the coupling gear142 so positioned, the lateral center of the mask aperture 30 will beindexed substantially at the lateral center of the working stationregardless of the dimensional variation due to thermal expansion,contraction and distortion of the elongated mask supporting frame 20.

In the preferred embodiment, the coupling gear 142 is rotatably mountedso as to be engagedly disposed relative to the translatably supportedtooth rack 140 such that rotation of the gear 142 causes the teethformed in the periphery thereof to engage and selectively transport thetooth rack 140 and the elongated mask supporting frame 20 attachedthereto relative to the support roller 110 and the central guide rollers120 and 122 along the path in a direction of elongation of the elongatedmask supporting frame.

In the preferred embodiment, the pitch diameter of coupling gear 142 andthe number of teeth in the support tooth rack gear 140 between theapertures' centers is selected such that one revolution of rotation ofthe coupling gear 142 transports the elongated mask supporting framealong its path a distance equal to the distance between the center linesof two adjacent apertures 30.

FIG. 7 illustrates in greater detail the relationship between theelongated mask supporting frame 20, a mask 50 which is supported by themask support assembly 52 and its position relative to the aperture 30which extends from the upper surface 24 to the lower surface 26. Theselected mask 50 has alignment targets 150 which are illustrated ingreater detail in FIG. 6 (a) and (b). The alignment targets 150 providea means for accurately aligning masks to each other. In FIG. 6 (a), themask support assembly 52 includes a plurality of pins for aligning themasks to a gantry means 60 shown as 170, 172 and 174. In addition aplurality of monitoring apertures have either the monitoring shield tubesuch as monitoring shield tube 156 mounted therein or a plurality ofcover members covering the apertures such as aperture covers 158, 160and 162.

FIGS. 7 and 8 show details of the alignment pins located on the masksupport assembly 52 and the alignment and receiving means 62, 64 and 66.

FIG. 7 shows the elongated mask supporting frame 20 having the uppersurface 24 and the lower surface 26. A mask frame support housing 54cooperates with the mask frame support 52 to support a mask 50 relativeto the aperture 30 in the elongated mask supporting frame 20 and tominimize the thermal conductivity of the assembly 50 and 52 and theelongated mask supporting frame 20. Mask frame support housing 54 isattached to elongated mask support frame 20. The locking ring 180contains shielding tube 42 between the elongated mask supporting frame20 and mask frame support housing 54. Housing 54 provides rotationalconstraint of 52 through a pin and a notch arrangement. The mask framesupport housing 54 supports the mask frame support 52 and the shieldingtube 42 holds the mask frame support 52 concentric.

In FIG. 7, two alignment pins are illustrated, pins 170 and 174. SinceFIG. 7 is a sectional view, pin 172, illustrated in FIG. 6 (a) is notshown but forms a third pin for the three pin alignment system.

FIG. 8 illustrates one embodiment of a gantry means 60 for supporting asubstrate relative to the mask 50. Pin receiving means 62, 66 and 64 areadapted to make mating engagement with pins 170, 172 and 174respectively. A substrate support housing is adapted to support thesubstrate 70 in a secure stable position. A support platform 202supports the substrate housing 200 through three flexible chain members204. An intermediate plate 206 may be used as a heat shield and as asupport for other components such as electrical conductors if requiredin the gantry means.

When the gantry means 60 as illustrated in FIG. 8 is positioned relativeto the mask support assembly 52 containing aligned pins, the alignedpins cooperate with the pin receiving means to permit the housing 200 tonestle into proper alignment between the pin receiving means and thepins such that the substrate 70 is accurately registered relative tomask 50. It is desirable to have prealigned the alignment pins relativeto the alignment pin receiving means in the housing to insure accurateregistration between the various masks each time the gantry ispositioned relative to the masks 50. The target 150 is used to establishthis pin prealignment between the various masks to insure the depositedpatterns from said masks have the proper registration one to another.

FIG. 9 illustrates pictorially the method for transporting the elongatedmask supporting frame 210 through a plurality of various positions. FIG.9 illustrates the elongated mask supporting frame 210 as having foursections, namely Sections 212, 214, 216 and 218. For purposes ofillustration, Section 212 is shown to have one aperture 220 located atthe far right end thereof and Section 218 is shown to have aperture 230at the far left end thereof. A translatably supported tooth rack 260 isdisposed along the elongated mask supporting frame in order to transportthe same such that the aperture from a specific section is positionedwithin a work area 234. A coupling gear 262 cooperates with thetranslatably supported tooth rack 260 such that controlled rotationthereof drives the tooth rack 260 and subsequently the elongated masksupporting frame to selectively position a selected mask of a pluralityof masks within the work area 234. In the embodiment illustrated inFIGS. 9 (a), (b) and (c), the pitch diameter of the coupling gear 262 isselected such that one revolution of the coupling gear 262 transportsthe elongated mask supporting frame 210 a distance equal to the distancebetween the center lines of two adjacent apertures.

In FIG. 9 (a), the elongated mask supporting frame 210 is shown in itscentered position when no apertures are positioned within the work area234. In the embodiment illustrated in FIG. 9 (a), the first pair ofcentral guide rollers 120 and 122 are positioned relative to thesupporting roller 110 to completely support the elongated masksupporting frame. The elongated mask supporting frame 210 is in a stableequilibrium condition of balance at this point. A second set or remoteguide rollers having grooved recesses therein are illustrated as 256 and258 and are located relative to the coupling gear 262 and the supportroller 110 such that movement of the elongated mask supporting frame 210to the right or left of the center position as shown in FIG. 9 (a)results in one of the second set of remote guide rollers 256 or 258providing additional support for the elongated mask supporting frame210.

FIG. 9 (b) illustrates the relationship between the elongated masksupporting frame 210 when aperture 230 which is located at the left handside of Section 218 is positioned within working area 234. Central guiderollers 120, and 122 cooperate with support roller 110 to support theaperture 230 within the work area 234. Remote guide roller 258 ispositioned so that its axis is in parallel spaced alignment with theaxes of central guide rollers 120 and 122 and the distance between theaxis of central guide roller 122 and the axis of remote guide roller 258is selected such that the remote guide roller 258 engages rail 90 andprovides additional support when the elongated mask supporting frame 210is moved a slight distance to the right from the center positionillustrated in FIG. 9 (a). The distance between the center line of acentral guide roller and its adjacent remote guide roller is selectedsuch that rail 90 does not engage its associate remote guide roller 256or 258 when the elongated mask supporting frame is in its centerposition and the rail 90 is at its maximum possible length due tothermal expansion, warpage and the like.

FIG. 9 (c) illustrates the elongated mask supporting frame in a positionwhere aperture 220 which is located to the extreme right hand side ofSection 212 is positioned within the work area 234.

In the position illustrated by FIG. 9 (c), guide rollers 120 and 122 andsupport roller 110 provide support for the elongated mask supportingframe 210 in the vicinity of the work area 234. Remote guide roller 256,which is located left of central guide roller 120, has its axis inspaced parallel relationship with the axis of central guide roller 120.The spacing of the axis of remote guide roller 256 relative to the axisof the central guide roller is determined using the same criteria setforth with respect to FIG. 9 (b).

As noted hereinbefore, when the elongated mask supporting frame 210 isin the position illustrated in FIGS. 9 (b) and 9 (c) it is subject tothermal expansion and warping. In the event that the elongated masksupporting frame 210 became so bowed and twisted that only one of thecentral guide rollers 120 or 122 may engage the guide rail 90 on theelongated mask supporting frame 210, a three point suspension andsupport is provided to the elongated mask supporting frame 210 by atleast one of the central guide rollers 120 and 122, one of the remoteguide rollers 256 or 258 and the support roller 110. An additionalsupport may be provided in the form of a loaded clamping roller 130illustrated as clamping roller 130 in FIGS. 4 and 5.

In the embodiment illustrated in 9 (a), 9 (b) and 9 (c), the rail 90which is located on the underside of the elongated mask supporting frame210 is maintained in a reference line which is defined by the centers ofthe grooved recessed areas and each of central guide rollers 120, 122,and remote guide rollers 256 and 258, either individually or incombination. During heating of the elongated mask supporting frame, theentire frame is subject to expansion, warping or growth along the widthand length thereof. Expansion of the dimension of the elongated masksupporting frame in a direction which is parallel to the axis of theguide rollers results in the rail 92 located on the side of theelongated mask supporting frame opposite to that supported by the guiderail 90 which is in contact with and rotatably supported by the outercylindrical surface of support roller 110, moving outward on the outercylindrical surface which does not restrain or otherwise fix the outerrail. In this manner, any warping, increase in length, or increase inwidth due to expansion by heating is compensated for by the carriageassembly such that when an aperture is positioned within the work area234, the three points of support are provided therein by guide rollers120, 122, support roller 110, and possibly guide rollers 256 or 258.When the rail 90 is engaged in remote guide roller 256 or 258 and thecarriage and rail 90 has a curvature formed therein due to warpage orbending, that is in the plane of the elongated mask supporting frame210, the rail 90 will engage one beveled side of central guide roller120 and the other beveled side of central guide roller 122. The netresult thereof is for the central guide rollers 120 and 122 to acteffectively as a single guiding device with the depth of engagement(mesh) of the rack 140 and the gear 142 remaining effectivly the same asif rail 90 were straight and seated in the bottom of the grooves 126 ofcentral guide rollers 120 and 122.

If rail 90 has curvature that lies normal to the plane of the elongatedmask supporting frame 210, and the rail 90 is engaged in guide rollers256 or 258, then only one of the central guide rollers 120 or 121 willbe engaged to guide rail 90. In addition, the clamping roller 130 suchas that illustrated in FIGS. 2, 4 and 5 can be used to insure that theelongated mask supporting frame is held within the grooves of thegrooved central guide rollers 120 and 122. As noted herein with respectto the central guide rollers 120 and 122, the grooved surface may belocated on the elongated mask supporting frame and a protruding lip maybe located on the periphery of the remote guide rollers 256 and 258 aswell as on the periphery of the central guide rollers 120 and 122.

FIG. 10 illustrates in greater detail an assembled gantry means 60 whichis mounted on and accurately registered with a mask frame assembly 52containing a mask 50. Alignment pin receiving means 62, 66 and 64 shownin FIG. 8 cooperate with the alignment pins in the mask support assemblyillustrated in FIGS. 6 and 7. The elongated mask supporting frame 20includes a translatably supported tooth rack 140 which cooperates withcoupling gear 142. The translatably supported tooth rack 140 has aplurality of spaced teeth 300 located along the edge thereof which areadapted to cooperate with teeth 302 located in the periphery of couplinggear 142. As noted herein, in this embodiment, one revolution of thecoupling gear 142 results in transporting the translatably supportedtooth rack 140 a distance equal to the distance between two center linesof two adjacent apertures located on the elongated mask supporting frame20. The central guide rollers 120 and 122 are dashed in to show theirposition relative to the clamping roller 130 and the coupling gear 142and support roller 110 is shown with its axis perpendicular with theaxis of coupling gear 142 as shown in FIG. 4.

In FIG. 10, monitoring apertures 156, 158, 160 and 162 are illustratedto show their positions relative to the gantry means in its assembledrelationship with the mask support assembly 52. In FIG. 10, the gantrymeans 60 is positioned in accurate registration position with a maskthrough the alignment pin receiving means 62, 64 and 66 which are shownin FIG. 8. The elongated mask supporting frame 20 is supported at threepoints by central guide rollers 120, and/or 122, and 110 when centeredand is additionally supported when off center by remote guide rollers256 or 258. The clamping roller 130 insures that elongated masksupporting frame 20 is intimately held in position thereagainst.

The apparatus of FIGS. 10 and 11 are adapted for sensing deposition of athin film layer of a material from a source onto a substrate 70. Theapparatus comprises means including means, such as carriage means 20,for defining a predetermined number of apertures 156, 158, 160 and 162for selectively passing predetermined portions of a material from asource 414 along each of a plurality of predetermined paths located inthe proximity of a substrate 70 under conditions correlated to thatunder which a material is deposited through a deposition path in a thinfilm layer onto the substrate 70. The apparatus includes meanspositioned relative to the selectively passing means for selectivelyinhibiting passage of a predetermined portion of the material througheach of a selected number of the predetermined number of apertures.

FIG. 11 illustrates, partially in cross-section, a typical monitoringshield tube 164 which is adapted to pass the material to the surface ofa detector 402 through an upper monitoring shield tube 400. In thepreferred embodiment, the monitoring means 419 includes a detectingmeans 421 and circuit means 423. The detecting means, shown as dashedbox 421, includes a detector 402 and an oscillating means, such ascrystal controlled oscillator 420. The oscillating means is operativelycoupled to each of the detecting means for generating an electricalsignal therefrom. The frequency of the electrical signals is a functionof the characteristics of the mass per unit area of the thin film layerof material collected on the detector 402 detecting surface.Specifically, the detector 402 varies the frequency of the electricsignal in a predetermined manner as a function of the selected parameterof the material forming the thin film layer. The conditions under whichdetector 402 collects the vapor deposited material are selected so thatthey can be correlated to that of the proximate substrate 70.

Circuit means, shown by dashed rectangle 423, in the preferredembodiment is a frequency detection circuit 422 which is operativelycoupled to each of the oscillator means for each detector. For example,oscillator 420 is connected to detector 402, for detecting a change infrequency of each crystal and for producing information signalsrepresentative of at least one of the mass per unit area, thickness ordeposition rate of the material so detected.

A programmable control means, shown by dashed rectangle 425, in thepreferred embodiment includes a control means 424 which is operativelycoupled to the circuit means 423, such as frequency detection circuit422, for receiving the information signals. The control means 424produces one or more control signals from the information signals andthe control signals are used to control and process variables in thevapor deposition process. In addition, the information signals areutilized as an input for an indication means 427.

The output from the control means 424 may be applied to an outputcircuit, such as source control 426. The source control 426 is adaptedto control the material source 414 via control 428 or to control ashutter 416 between the source 414 and mask shield 42 by mechanism 429.

The enabling of a monitor shield tube 164 to pass the material is shownin FIG. 11. The material passes through monitor shield tube 164 andupper monitor shield tube 400 in detector 402.

The inhibiting of a monitor opening is illustrated by blocked monitorshield tube 410 having a cap 412 to prevent passage of material todifferent detectors, such as detector 404.

As noted above, the circuit means 423, which in the preferred embodimentis a frequency detection circuit 422, can be characterized as a portionof the means for monitoring a selected parameter of a thin film materialwhich is passed through other than the selected number of thepredetermined number of the apetures of the selectively passing means.The monitoring means 419 includes detectors 402 and 404 which arepositioned along each of the plurality of predetermined paths and areadapted to sense a predetermined portion of the thin film material beingpassed along its associated predetermined path and for producingelectrical signals derived from the selected parameter of the thin filmmaterial so detected representing at least one of the mass per unitarea, thickness and deposition rate of a said thin film of material.

As illustrated in FIG. 11, the monitoring means 419 also includescircuit means 423 which are responsive to the electrical signals fromthe detecting means 421 for processing the electrical signals receivedtherefrom to produce information signals in a predetermined formatrepresenting at least one of the mass per unit area, thickness anddeposition rate of the material so detected.

The apparatus of FIG. 11 further comprises programmable control means425 which includes a control means 424 operatively coupled to thecircuit means 423. The programmable control means 425 is responsive tothe information signals to produce at least one control signal which isadapted to control the source of material for producing at least one ofa predetermined mass per unit area, thickness and selected depositionrate of the material.

The apparatus of FIG. 11 illustrates that the programmable control means425 includes means responsive to the information signals, such asindicating means 427, for indicating when the detected material attainsat least one of a selected mass per unit area, a selected thickness anda selected deposition rate which is representative of the samecharacteristic of the material deposited in a thin film layer onto aproximate substrate.

The apparatus of FIG. 11 includes one embodiment of a detecting means421. The detecting means 421 may include a surface for collecting a thinfilm layer of material thereon. Also, the circuit means 423 wouldinclude means for measuring the resistance of the thin film layer ofmaterial collected on the detecting means surface and producingelectrical signals representative of the resistance thereof. Theresistance varies in magnitude as a function of the characteristic of atleast one of the mass per unit area and thickness of a thin film layerof material collected on the detecting means surface.

Circuit means 423 are operatively coupled to each of the resistancemeasuring means and are responsive to the electrical signals fordetecting a change in resistance of each thin film layer of materialdeposited onto the detecting means surface and for producing theinformation signals derived from the resistance of the thin film layerof material deposited on the detecting means surface. The informationsignals are representative of the characteristic of at least one of themass per unit area, thickness and deposition rate of said materialdeposited in a thin film layer onto the proximate substrate 70.

The programmable control 425 means would include control meansoperatively coupled to each of the resistance detecting means forreceiving information signals and producing therefrom at least onecontrol signal representative of a selected at least one of said massper unit area, thickness and deposition rate of said material beingdeposited onto said detecting means surface. The operation of thedetecting means is correlated to the same conditions as that under whichthe material is deposited in a thin film layer onto the proximatesubstrate 70. The control signal would then be utilized as statedhereinbefore.

In addition, means responsive to the information signals would indicatethat a thin film layer of material of a selected at least one of a massper unit area, thickness and a selected deposition rate has beendeposited on the detecting means surface which is representative of thesame characteristic of the material deposited in a thin film layer ontothe proximate substrate 70.

Also, the apparatus of FIG. 11 could utilize a detecting means whichincludes an optical sensing means and means for measuring the opticalcharacteristics of material sensed by the optical sensing means and forproducing electrical signals representative of the opticalcharacteristics thereof. The optical characteristics of the opticalsensing means vary as a function of the deposition characteristic ofmaterial sensed thereby.

Circuit means operatively coupled to the optical characteristicmeasuring means and responsive to the electrical signals would includemeans for detecting a change in optical characteristics of the materialsensed by the optical sensing means and for producing informationsignals derived from selected optical characteristics of the material.The so-produced information signals would be representative of aselected at least one of the mass per unit area, thickness anddeposition rate of a thin film layer deposited onto the proximatesubstrate 70.

The programmable control means would include a control means which isoperatively coupled to the circuit means, which includes the opticaldetecting means, for receiving the information signals and for producingtherefrom at least one control signal representative of a selected atleast one of said mass per unit area, thickness and deposition rate ofthe material which is correlated to the same conditions as that underwhich said thin film layer of material is deposited onto a saidproximate substrate 70. The control signal would then be utilized asstated hereinbefore.

Means would be included which are responsive to the information signalsfor indicating that material deposited in a thin film layer onto a saidproximate substrate has attained a selected at least one of a mass perunit area, thickness and a selected deposition rate.

Another embodiment of the apparatus of FIG. 11 would comprise adetecting means which includes means for sensing vapor density of thepredetermined portion of material in a vapor phase passing along eachpredetermined path and for producing electrical signals representativeof the vapor density of the material passing along each predeterminedpath.

The circuit means could include means operatively coupled to said vapordensity sensing means for receiving the electrical signals and forproducing said information signals representing at least one of the massper unit area, thickness and deposition rate of a thin film of materialwhich is correlated to the same conditions as that under which the thinfilm of material is deposited onto a said proximate substrate 70.

The programmable control means would include control means operativelycoupled to the circuit means for receiving the information signals andproducing therefrom at least one control signal representative of aselected at least one of the mass per unit area, thickness anddeposition rate of a thin film of material deposited in a thin filmlayer onto the proximate substrate 70. The control signal can beutilized as stated hereinbefore.

Means are responsive to the information signals for indicating that adetected quantity of material has passed along the predetermined pathwhich is representative of material forming a thin film layer of aselected at least one of a mass per unit area, thickness and selecteddeposition rate which has been deposited in a thin film layer onto theproximate substrate 70.

Referring to FIG. 12, a top plan view partially in cross section showsthe mask shield 42, the mask frame support housing 54, and themonitoring shield tube 164. The other three monitoring apertures 158,160 and 162 are capped such that vapor from the vapor deposition canpass through monitoring shield tube 156 only.

By use of the monitoring shield tube 164 and monitoring shield tube capselection technique as illustrated in FIG. 12 above, a specificdeposition thickness monitoring device can be selected as a function ofa specific monitoring shield tube in association with a specific maskpositioned at a vapor deposition working station located along thedeposition path between a source and a substrate. The monitoringdevices, shown by dashed rectangles 300, are located above the planeillustrated in FIG. 12.

FIGS. 13 (a), 13 (b) and 13 (c) illustrate an example of how a specificdetector can be associated with a specific mask.

FIG. 13 (a) shows mask 464 in a section 460 of an elongated masksupporting frame having monitor tube 472 and 476 enabled with monitortube section 470 and 474 inhibited.

FIG. 13 (b) shows mask 466 in a section 461 of an elongated masksupporting frame having monitor tube 570 enabled with monitor tubesection 572, 574 and 576 inhibited.

FIG. 13 (c) shows mask 468 in a section 462 of an elongated masksupporting frame having monitor tube 674 enabled and monitor tubesection 670, 672 and 676 inhibited.

In this manner, four separate detectors can be used and a specificdetector, or two detectors or more, if redundancy is important as inFIG. 13 (a), can be allocated to a specific mask.

The carriage assembly as illustrated in FIGS. 12 and 13 inherentlyprograms the array of detector relative to the plurality of depositionmasks such that when a specific deposition mask is transported to theworking stage, the appropriate detector is automatically enabled andreceives the material.

In the preferred embodiment of the present invention, the carriageassembly for indexing a selected mask from a plurality of masks isadapted for use with a vapor deposition source which is located at aworking stage. However, it is envisioned and anticipated that thecarriage assembly hereof has wide application in all types of depositionsystems including, without limitation, sputtering systems, chemicalvapor deposition systems, plating techniques and the like.

In addition, it is envisioned that one or more gantry means could beused so that parallel deposition of a layer onto a substrate can occurso that one or more masks and/or substrates are utilized so that one ormore working areas are provided during each deposition step.

Of importance is the fact that the elongated mask supporting frameprovides a means for providing a coarse indexing of an aperture, maskassembly and associated monitoring tubes relative to a source and thatthe precise final accurate registering is obtained by aligning thegantry means with the substrate relative to the mask. Prior to thedeposition process, it is anticipated that each of the masks would beprealigned to the gantry means such that accurate registration wouldoccur between the gantry means and the mask at any location and when anymask is positioned within the working station.

In addition, it is possible that one of the layers being depositedduring the vacuum deposition could be a magnetic layer which could formpole pieces for a thin film magnetic transducer. In such event, it isdesirable to preorientate the magnetic means within the magneticmaterial during deposition thereof. FIG. 2 illustrates that one or moresections of the elongated mask supporting frame 20 could include a setof parallel spaced aligned magnets 700 and poles 88 to provide thedesired magnetic orientation in the magnetic domains. Of course, thespaced parallel aligned magnets 700 and poles 88 could be locatedselectively within any section of the elongated mask supporting frame asdesired. In utility, a wide range of thin film deposited components canbe fabricated using the teachings of this invention. The preferredembodiment of the present invention is to form thin film magnetictransducers which require precisely aligned pole pieces, windings,layers and the like. However, it is possible to fabricate other lessercomponents such as capacitors, resistors, inductors, transformers andcombinations of these components using the multi-step, multi-masktechnique including the use of the unique carriage assembly disclosedherein.

In a multi-step deposition process where a large number of thin films ofdifferent materials are to be deposited, it is anticipated that onemonitoring aperture, its associated monitoring tube path and detectormay be used for each material. Also, when redundancy, accuracy andcontrol are important, two separate detectors, with two separatemonitoring apertures and their associated monitoring tube paths may beutilized. In addition, if the number of monitoring apertures are lessthan the desired number of different thin film materials to bedeposited, one of the detectors may be used for monitoring the mass perunit area, thickness or deposition rate of more than one material. Thisis accomplished by correlating the effects of the two differentmaterials collected on the detector to the actual deposition conditionsthat the same materials are collected on a substrate. Further, if onemask is used for depositing two different materials on a substrate, andtwo separate detectors are utilized, a shutter mechanism may be used toenable the appropriate monitoring path to the appropriate detector.

It is also envisioned that other techniques be used to increase thereliability, registerability and other effects of the mask substrateinterface by providing means for stabilizing the mask and substrateduring deposition to minimize misregistration due to the effects ofthermal expansion and uncontrolled variables.

The preferred embodiment of the present invention provides for the useof four detectors in a predetermined array to monitor production of athin film magnetic transducer in a multi-step vapor deposition process.

The method of selectively inhibiting material from passing along apredetermined path to a detector for each step of the multi-step processpermits the fabrication of a thin film magnetic transducer or otherdeposited devices formed of a plurality of layers of different materialto have an overall thickness which clearly exceeds the thickness of afilm of material which could be deposited on only one of the detectors.Thus, by use of a plurality of detectors, the operating range of any onedetector, which is a function of the thickness of film formed thereon,will not be exceeded in the deposition process.

Further, individual detectors can be dedicated to a specific material orcombination of materials to avoid undesirable effects which wouldotherwise occur from use of a single detector with layers of multiplematerial being deposited and relying on that single detector for processmonitoring and control.

What is claimed is:
 1. Apparatus for sensing deposition of a thin filmlayer of a material from a source onto a substrate comprisingsupportingmeans adapted to be positioned between a substrate and a source andincluding selectively passing means for enabling passage of selectedpredetermined portions of a said material from a said source along eachof a plurality of predetermined paths located in the proximity of a saidsubstrate and adjacent a deposition path under conditions correlated tothat under which a said material is deposited through a said depositionpath in a thin film layer onto a said substrate; means positionedrelative to said supporting means for selectively inhibiting passage ofa said selected predetermined portion of a said material through certainof said selectively passing means; means for monitoring a selectedparameter of a said thin film material which is passed through certainof said selectively passing means, said monitoring means includingdetecting means positioned along each of said plurality of predeterminedpaths and being adapted to sense a said predetermined portion of a saidthin film material being passed along its associated predetermined pathand for producing electrical signals derived from the selected parameterof a thin film material so detected representing at least one of themass per unit area, thickness and deposition rate of a said thin film ofmaterial; and means operatively coupled to said supporting means fortransporting the supporting means including the selectively passingmeans relative to a said substrate and source to selectively changecertain of said selectively passing means while enabling a selectedpredetermined portion of a said material to pass through certain of theselectively passing means to said monitoring means.
 2. The apparatus ofclaim 1 wherein said monitoring means includescircuit means responsiveto said electrical signals from the detecting means for processing saidelectrical signals to produce information signals therefrom in apredetermined format representing at least one of the mass per unitarea, thickness and deposition rate of the material so detected.
 3. Theapparatus of claim 2 further comprisingprogrammable control meansoperatively coupled to said circuit means and responsive to saidinformation signals to produce at least one control signal which isadapted to control the source of material for producing at least one ofa predetermined mass per unit area, thickness and selected depositionrate of said material.
 4. The apparatus of claim 2 wherein saidprogrammable control means includesmeans responsive to said informationsignals for indicating when the detected material attains at least oneof a selected mass per unit area, a selected thickness and a selecteddeposition rate which is representative of the same characteristic of asaid material deposited in a thin film layer onto a said proximatesubstrate.
 5. The apparatus of claim 3 wherein said detecting meansincludes a piezoelectric crystal detecting surface which is adapted tohave a thin film of material deposited thereon and wherein saiddetecting means includesoscillator means operatively coupled to each ofsaid detecting means for generating electrical signals therefrom, thefrequency of which is a function of the characteristics of the mass perunit area of the thin film of material deposited onto said piezoelectriccrystal detecting surface; and wherein said circuit means includes meansoperatively coupled to said oscillator means for detecting a change infrequency thereof and for producing said information signals derivedfrom selected characteristics of the frequency of each of saidoscillator means and wherein said programmable control means includes;control means operatively coupled to each of said frequency detectingmeans for receiving each of said information signals and producing saidat least one control signal representative of a selected at least one ofsaid mass per unit area, thickness and deposition rate of said materialbeing collected on said detecting surface which is correlated to thesame conditions as that under which said material forming a thin filmlayer on a said proximate substrate.
 6. The apparatus of claim 5 whereinsaid programmable control means includes means responsive to saidinformation signals for indicating that a thin film layer of a saidmaterial of a selected at least one of a mass per unit area andthickness has been collected on a said crystal detecting surface whichis representative of the same characteristic of a said materialcollected forming a thin film layer on a said proximate substrate. 7.The apparatus of claim 5 wherein said programmable control meansincludesmeans responsive to said information signals for indicating whensaid material has a selected deposition rate which is representative ofthe same characteristic of a said material forming a thin film layer ona said proximate substrate.
 8. The apparatus of claim 3 wherein saiddetecting means includes a surface for collecting a thin film layer of asaid material thereon and said detecting means includesmeans formeasuring the resistance of the thin film layer of material collected onsaid detecting means surface and producing electrical signalsrepresentative of the resistance thereof, said resistance varying inmagnitude as a function of the characteristic of at least one of themass per unit area and thickness of a thin film layer of materialcollected on said detecting means surface; and whereas said circuitmeans includes means operatively coupled to each of the resistancemeasuring means and responsive to said electrical signals for detectinga change in resistance of each thin film layer of material depositedonto said detecting means surface and for producing said informationsignals derived from the resistance of the thin film layer of materialdeposited on the detecting means surface which is representative of thecharacteristic of at least one of the mass per unit area, thickness anddeposition rate of said material deposited in a thin film layer onto asaid proximate substrate; and wherein said programmable control meansincludes control means operatively coupled to each of said resistancedetecting means for receiving said information signals and producingtherefrom at least one control signal representative of a selected atleast one of said mass per unit area, thickness and deposition rate ofsaid material being deposited onto said detecting means surface which iscorrelated to the same conditions as that under which said material isdeposited in a thin film layer onto a said proximate substrate.
 9. Theapparatus of claim 8 wherein said programmable control meansincludesmeans responsive to said information signals for indicating thata thin film layer of a said material of a selected at least one of amass per unit area and thickness has been deposited on a said detectingmeans surface which is representative of the same characteristic of asaid material deposited in a thin film layer onto a said proximatesubstrate.
 10. The apparatus of claim 8 wherein said programmablecontrol means includesmeans responsive to said information signals forindicating when said material has a selected deposition rate which isrepresentative of the same characteristic of a said material depositedin a thin film layer onto a said proximate substrate.
 11. The apparatusof claim 3 wherein said detecting means includesan optical sensingmeans; means for measuring the optical characteristics of materialsensed by said optical sensing means and for producing electricalsignals representative of the optical characteristics thereof, saidoptical characteristics varying as a function of the depositioncharacteristic of material sensed by the optical sensing means; andwherein said circuit means includes means operatively coupled to saidoptical characteristic measuring means and responsive to said electricalsignals for detecting a change in optical characteristics of saidmaterial sensed by said optical sensing means and for producing saidinformation signals derived from selected optical characteristics ofsaid material, which is representative of a selected at least one of asaid mass per unit area, thickness and deposition rate of a thin filmlayer deposited into a said proximate substrate; and wherein saidprogrammable control means includes control means operatively coupled tosaid circuit means for receiving said information signals and forproducing therefrom at least one control signal representative of aselected at least one of said mass per unit area, thickness anddeposition rate of a said material which is correlated to the sameconditions as that under which said thin film layer of material isdeposited onto a said proximate substrate.
 12. The apparatus of claim 11wherein said programmable control means includesmeans responsive to saidinformation signals for indicating that said material deposited in athin film layer onto a said proximate substrate has attained a selectedat least one of a mass per unit area and thickness.
 13. The apparatus ofclaim 11 wherein said programmable control means includesmeansresponsive to said information signals for indicating when said materialhas a selected deposition rate which is representative of the samecharacteristic of a said material deposited in a thin film layer onto asaid proximate substrate.
 14. The apparatus of claim 3 wherein saiddetecting means includes means for sensing vapor density of thepredetermined portion of a said material in a vapor phase passing alongeach predetermined path and for producing said electrical signalsrepresentative of the vapor density of a said material passing alongeach predetermined path; and wherein said circuit means furtherincludesmeans operatively coupled to said vapor density sensing meansfor receiving said electrical signals and producing said informationsignals representing at least one of said mass per unit area, thicknessand deposition rate of a thin film of material which is correlated tothe same conditions as that under which said thin film of material isdeposited onto a said proximate substrate; and wherein said programmablecontrol means includes control means operatively coupled to said circuitmeans for receiving said information signals and producing therefromsaid at least one control signal representative of a selected at leastone of said mass per unit area, thickness and deposition rate of a thinfilm of material deposited in a thin film layer onto said proximatesubstrate.
 15. The apparatus of claim 14 wherein said programmablecontrol means includesmeans responsive to said information signals forindicating that a detected quantity of a said material has passed alongsaid predetermined path which is representative of material forming athin film layer of a selected at least one of a mass per unit area andthickness which has been deposited in a thin film layer onto a saidproximate substrate.
 16. The apparatus of claim 14 wherein saidprogrammable control means includesmeans responsive to said informationsignals for indicating when said material has a selected deposition ratewhich is representative of the same characteristic of a said materialdeposited in a thin film layer on a said proximate substrate.
 17. Theapparatus of claim 1 wherein said supporting means comprisesa carriageassembly having an elongated supporting frame having an upper surfaceand a lower surface and including means for defining a plurality of maskreceiving apertures extending through the upper surface and the lowersurface thereof wherein each mask receiving aperture has a predetermineddiameter and has a predetermined relationship between the centersthereof and each of which is adapted to pass said material along saiddeposition path through a selected mask receiving aperture adapted tohave a mask located therein, said elongated supporting frame selectivelypassing means defining a predetermined number of apertures as monitoringapertures positioned around the periphery of each one of said maskreceiving apertures, each of said monitoring apertures being adapted toreceive and pass therethrough along its associated predetermined path aselected one of said plurality of said predetermined portions of a saidmaterial being passed along said deposition path through said selectedmask receiving aperture and a said mask into a said substrate.
 18. Theapparatus of claim 17 further comprisinga plurality of monitoring shieldtubes one of which is located in each of said monitoring apertures insaid carriage assembly, said monitoring shield tubes being adapted topass a said predetermined portion of said material being passed alongsaid deposition path.
 19. The apparatus of claim 18 further comprisingapredetermined number of upper monitoring tubes, one of which ispositioned in each of said predetermined paths and intermediate saidmonitoring shield tubes associated with a said selected mask receivingaperture and said detecting means, said upper monitoring shield tubesbeing adapted to pass a said preselected portion of materialtherethrough and along its associated predetermined path to itsassociated detecting means.
 20. The apparatus of claim 18 wherein eachof said plurality of monitoring shield tubes are formed of a thin walledelongated housing having a substantially annular cross-section.
 21. Theapparatus of claim 19 wherein each of said plurality of upper monitoringshield tubes are formed of a thin walled elongated housing having asubstantially annular cross-section.
 22. The apparatus of claim 17wherein there are four monitoring apertures positioned adjacent saidmask receiving aperture and located with two monitoring apertures oneach side of the longitudinal axis of the elongated supporting frame.23. The apparatus of claim 22 having four separate detecting meanspositioned one each along the predetermined paths of each of said fourmonitoring apertures positioned adjacent said selected mask receivingaperture.
 24. The apparatus of claim 17 wherein a source directsmaterial along said plurality of predetermined paths and along saiddeposition path and further comprisingmeans responsive to said at leastone control signal for terminating said source from directing materialalong said deposition path and said plurality of predetermined pathswhen said at least one control signal indicates that a thin film layerof a selected at least one of a mass per unit area and thickness of asaid material has been deposited on a said proximate substrate.
 25. Theapparatus of claim 17 wherein a source directs material along saidplurality of predetermined paths and along said deposition path andfurther comprisingmeans responsive to said at least one control signalfor terminating said source from directing material along saiddeposition path when said at least one control signal indicates that athin film layer of a selected at least one of a mass per unit area andthickness of a said material has been deposited on a said proximatesubstrate.
 26. The apparatus of claim 17 wherein said monitoring meansincludean interrupting means adapted to be selectively moved between twoadjacent detecting means of said plurality of detecting means toalternately block one of the two predetermined paths.
 27. Apparatus forsensing at least one of the mass per unit area and thickness of eachlayer of a plurality of layers of thin film materials applied to asubstrate through a plurality of separate deposition masks individuallypositioned between the substrate and a source of thin film materialsfurther comprisingcarriage means for supporting a plurality ofdeposition masks in a predetermined relationship relative to each otherand being adapted to individually position any selected one of saidplurality of masks along a deposition path between a substrate and asource of thin film material; means operatively coupled to said carriagemeans for transporting said carriage means along a predetermined pathwayand for indexing a selected deposition mask between a said substrate anda said source; means positioned relative to the carriage means and asubstrate for accurately registering a said substrate with a selecteddeposition mask located between a said substrate and a said source toenable said thin film material from a said source of thin film materialto pass through said indexed and accurately registered mask to asubstrate; means operatively coupled to said carriage means for definingat least one monitoring aperture and a plurality of associatedpredetermined paths which are adapted to pass a predetermined portion ofa said material from a source along each of a said plurality ofpredetermined paths as the thin film material is deposited through asaid deposition mask onto a substrate; and means for selectivelyinhibiting the passage of a predetermined portion of a said thin filmmaterial along its associated predetermined path to a detecting means toprogram at least one open predetermined path through a monitoringaperture with a selected deposition mask.
 28. The apparatus of claim 27further comprisinga monitoring means including a plurality of detectingmeans for producing electrical signals derived from a selected parameterof a said thin film material, said plurality of detecting means beingpositioned with a selected one thereof along one of said plurality ofpredetermined paths and being adapted to have a predetermined portion ofmaterial being directed along its associated predetermined path sensedby the associated detecting means; and circuit means operatively coupledto each of said detecting means and responsive to the electrical signalstherefrom for providing information signals having a characteristicwhich is representative of a parameter of at least one of said mass perunit area, thickness and deposition rate of the thin film layer ofmaterial sensed by the detecting means, said monitoring means beingadapted to vary the characteristics of said information signals in apredetermined manner as a function of at least one of the mass per unitarea, thickness and deposition rate of the material forming said thinfilm layer on a said proximate substrate.
 29. The apparatus of claim 28further comprisingmeans for selecting a predetermined detecting means inconjunction with a selected deposition mask to program a selecteddeposition mask with a selected detecting means.
 30. The apparatus ofclaim 27 further comprisinga weight measuring means including acollecting surface which is responsive to the mass of a said thin filmlayer of material collected thereon for indicating a change in weight ofa said thin film material collected on said weight measuring meanscollecting surface.
 31. Apparatus for sensing deposition of a thin filmlayer of a material from a source onto a substrate comprisingmeans formonitoring a selected parameter of a said thin film material whereinsaid monitoring means includes a plurality of detecting means adapted tobe positioned relative to a said source and located in the proximity ofa said substrate to define a plurality of predetermined paths between asaid source and each of said detecting means, one of said predeterminedpaths being associated with a selected one of said detecting means, eachof said detecting means being adapted to sense a predetermined portionof a said thin film material being passed along its associatedpredetermined path and for producing electrical signals derived from aselected parameter of a the thin film material so detected representingat least one of the mass per unit area, thickness and deposition rate ofsaid thin film material; means adapted to be positioned between saiddetecting means and a source and including means defining at least oneaperture adapted to be positioned along a selected predetermined pathdefining a first position and at least a second aperture adapted to bepositioned along a selected associated predetermined path defining asecond position, each of said apertures being adapted to selectivelypass said predetermined portions of a said thin film material from asource along a selected associated predetermined path to its associateddetecting means and for selectively inhibiting the passing of saidpredetermined portions of a said thin film material along the otherpredetermined paths to their associated detecting means under conditionscorrelated to that under which a said thin film material is depositedthrough a deposition path in a thin film layer onto a said substrate;and means operatively coupled to said selective passing means fortransporting the same between said first position and said secondposition which locates at least one of said apertures between a selectedone of detecting means and a source wherein the selectively passedpredetermined portions of a said thin film material from a source passesalong its associated predetermined path and is deposited on itsassociated detecting means.